3D Integration (TSVs) |
|
This grant provided funding for development of a new material system for micro/nanoelectronic interconnects. The material system was developed to overcome reliability issues associated with copper interconnects. This work may make it possible to fabricate nanoscale interconnects that possess low electrical resistance and high mechanical strength to provide a robust next generation nano-interconnect. Utilizing advanced micro/nanofabrication processes, carbon nanotubes (CNTs) were grown inside through silicon vias and a copper matrix was added to enhance the density, strength and conductivity of the CNTs. Electrical resistance of individual vias was measured to obtain insight on interface resistance of copper and CNT bundles.
Interconnects are an essential component of any electronic system. Therefore, advancements in the area of interconnects will enhance three dimensional (3D) integration of complex electronic devices. This new material system may be capable of resolving several performance and reliability issues that exist with copper interconnects today, such as high resistivity at very small dimensions and electromigration. |
